Abstract
A systematic atomic-scale analysis is presented of the interactions of chemically reactive radicals originating in silane/hydrogen discharges with surfaces of hydrogenated amorphous silicon (a-Si:H) films. The hydrogen concentration on the surface is identified as the major factor that controls both the reactivity of the radical on the surface reaction mechanism; other important factors include the location of impingement of the radical on the surface and the molecular orientation of the radical with respect to the surface. SiH is found to react with a-Si:H surfaces independent of location of impingement and radical orientation; the reaction mechanism, however, depends strongly on the hydrogen coverage of the surface and impingement location. Our results are in excellent agreement with experimental data for the reaction probability of SiH with a-Si:H film surfaces.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 107-112 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 485 |
| State | Published - 1998 |
| Event | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Nov 30 1997 → Dec 4 1997 |