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Black phosphorus (BP) has emerged as a promising channel material for highly scaled transistors with a high mobility (1000 cm2/Vs), tunable band gap (0.3 eV-2.0 eV), and anisotropic effective mass - at ultra-thin body thicknesses. While devices with high performance in the ON-state have been demonstrated by using Schottky contacts, the subthreshold characteristics have been poor ,. This is caused by large ambipolar carrier injection from the drain due to the relatively small, direct band gap of BP and a low effective mass. Recently, it has been shown that using electrostatically doped (ES-doped) source and drain contacts can improve the subthreshold characteristics in BP MOSFETs , however, the potential advantage of this approach was not well quantified. In this work, we directly compare BP MOSFETs with ES-doped and Schottky contacts, and show greatly improved subthreshold and off-state leakage behavior in ES-doped devices, particularly at high drain bias. Using a one-dimensional transport model, we further show that the advantage of the ES-doped devices is due to the ambipolar current being limited by band-to-band tunneling. Experimentally exploring BTB-tunneling in BP is a first step towards developing BP TFETs.
|Original language||English (US)|
|Title of host publication||75th Annual Device Research Conference, DRC 2017|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Aug 1 2017|
|Event||75th Annual Device Research Conference, DRC 2017 - South Bend, United States|
Duration: Jun 25 2017 → Jun 28 2017
|Name||Device Research Conference - Conference Digest, DRC|
|Other||75th Annual Device Research Conference, DRC 2017|
|Period||6/25/17 → 6/28/17|
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Reporting period for MRSEC
- Period 4