Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure

Saurabh Kumar Pandey, Sushil Kumar Pandey, Vishnu Awasthi, Ashish Kumar, M. Gupta, V. Sathe, Shaibal Mukherjee

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17 Scopus citations

Abstract

Mg-doped ZnO (MgZnO) films were grown on p-Si (001) substrates by dual ion beam sputtering deposition system at a constant growth temperature of 600 C for different oxygen partial pressure. The impact of oxygen partial pressure on the structural, electrical, elemental and morphological properties was thoroughly investigated. X-ray diffraction (XRD) spectra revealed that the deposited MgZnO films were polycrystalline in nature with preferred (002) crystal orientation. The peak of MgZnO (101) plane was reduced significantly as oxygen partial pressure was increased and disappeared completely at 80 and 100 % O2. The maximum electron concentration was evaluated to be 5.79 × 10 18 cm-3 with resistivity of 0.116 Ω cm and electron mobility of 9.306 cm2/V s at room temperature, for MgZnO film grown with 20 % O2. Raman spectra shows a broad peak at 434 cm-1 corresponded to E 2 high phonons mode of MgZnO wurtzite structure. The peak at 560 cm-1 corresponded to the E1 (LO) mode and was associated with oxygen deficiency in MgZnO films. Raman intensity at 560 cm-1 reduced, on increasing oxygen partial pressure. A correlation between structural, electrical, elemental and morphological properties with oxygen partial pressure was also established.

Original languageEnglish (US)
Pages (from-to)772-777
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume25
Issue number2
DOIs
StatePublished - Feb 2014

Bibliographical note

Funding Information:
Scientist No. SR/FTP/ETA-101/2010. This work is also supported by DST Science and Engineering Research Board (SERB) Project Number SR/S3/EECE/0142/2011 and Council of Scientific and Industrial Research (CSIR) Project Number 22(0608)/12/EMR-II. We express our sincere thanks to the Department of Physics and Astrophysics, University of Delhi, Delhi-110007 for Raman studies. We are also grateful for the Atomic Force Microscopy (AFM) Facility equipped at Sophisticated Instrument Centre (SIC), IIT Indore.

Funding Information:
Acknowledgments This work is partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young

Funding Information:
M. Gupta · V. Sathe University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore, India

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