Abstract
Experiments are described which explore the changes in the densities of electrons or holes in doped amorphous silicon when it is annealed with an applied bias. Such bias annealing produces a metastable enhancement of the doping efficiency by altering the distribution of localized states. A model is proposed in which the effects are directly related to the doping mechanism of amorphous silicon.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 21-26 |
| Number of pages | 6 |
| Journal | Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties |
| Volume | 54 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jul 1986 |
Bibliographical note
Funding Information:We are grateful to Z. Smith and M. Stutzmann for helpful discussions, and to R. Thompson, C. C. Tsai and J. Zesch for assistance in sample preparation. The research is supported by the Solar Energy Research Institute.
