Black phosphorus p- and n-MOSFETs with electrostatically doped contacts

Matthew C. Robbins; Steven J. Koester

doi:10.1109/LED.2016.2638818

Black phosphorus p- and n-MOSFETs with electrostatically doped contacts

Matthew C. Robbins, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and n-MOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve I_ON/I_OFF of greater than 10⁴at V_DS = 1.0 V with only a 14% increase in subthreshold slope from V_DS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high ${V} -{\textsf {DS}}$ and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.

Original language	English (US)
Article number	7781615
Pages (from-to)	285-288
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	2
DOIs	https://doi.org/10.1109/LED.2016.2638818
State	Published - Feb 2017

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award DMR-1420013, and also used the Minnesota Nano Center and Characterization Facilities, which receive partial support from NSF

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

2D materials
Black phosphorus
doping
MOSFETs

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10.1109/LED.2016.2638818

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title = "Black phosphorus p- and n-MOSFETs with electrostatically doped contacts",

abstract = "This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and n-MOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve ION/IOFF of greater than 104at VDS = 1.0 V with only a 14% increase in subthreshold slope from VDS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high ${V} -{\textsf {DS}}$ and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.",

keywords = "2D materials, Black phosphorus, doping, MOSFETs",

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note = "Funding Information: This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award DMR-1420013, and also used the Minnesota Nano Center and Characterization Facilities, which receive partial support from NSF Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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AB - This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and n-MOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve ION/IOFF of greater than 104at VDS = 1.0 V with only a 14% increase in subthreshold slope from VDS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high ${V} -{\textsf {DS}}$ and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.

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Black phosphorus p- and n-MOSFETs with electrostatically doped contacts

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

Access

OpenUrl availability

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MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this

Black phosphorus p- and n-MOSFETs with electrostatically doped contacts

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

Access

OpenUrl availability

Other files and links

Fingerprint

Projects

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this