Block copolymers for DSA in the 100 Å regime

C. Grant Willson; Gregory Blachut; Michael J. Maher; William J. Durand; Christopher M. Bates; Matthew C. Carlson; Jeffrey L. Self; Austin P. Lane; Yusuke Asano; Stephen Sirard; Colin O. Hayes; Christopher J. Ellison

doi:10.2494/photopolymer.27.415

Block copolymers for DSA in the 100 Å regime

C. Grant Willson, Gregory Blachut, Michael J. Maher, William J. Durand, Christopher M. Bates, Matthew C. Carlson, Jeffrey L. Self, Austin P. Lane, Yusuke Asano, Stephen Sirard, Colin O. Hayes, Christopher J. Ellison

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

Block copolymers with lines and spaces in the 100 Å regime have been oriented using a perfectly neutral top coat and bottom coat and these structures have been successfully developed with RIE to provide high aspect ratio topographic features. Under these conditions, the materials can be annealed in less than 60 seconds. Future work will be directed toward continued increases in χ and development of simple and efficient processes for orienting these structures.

Original language	English (US)
Pages (from-to)	415-418
Number of pages	4
Journal	Journal of Photopolymer Science and Technology
Volume	27
Issue number	4
DOIs	https://doi.org/10.2494/photopolymer.27.415
State	Published - Sep 13 2014

Bibliographical note

Publisher Copyright:
© 2014SPST.

Keywords

Block copolymers
DSA
Etching
Lithography

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@article{3a815bba8ed144e88d030ba4a3f413df,

title = "Block copolymers for DSA in the 100 {\AA} regime",

abstract = "Block copolymers with lines and spaces in the 100 {\AA} regime have been oriented using a perfectly neutral top coat and bottom coat and these structures have been successfully developed with RIE to provide high aspect ratio topographic features. Under these conditions, the materials can be annealed in less than 60 seconds. Future work will be directed toward continued increases in χ and development of simple and efficient processes for orienting these structures.",

keywords = "Block copolymers, DSA, Etching, Lithography",

author = "{Grant Willson}, C. and Gregory Blachut and Maher, {Michael J.} and Durand, {William J.} and Bates, {Christopher M.} and Carlson, {Matthew C.} and Self, {Jeffrey L.} and Lane, {Austin P.} and Yusuke Asano and Stephen Sirard and Hayes, {Colin O.} and Ellison, {Christopher J.}",

note = "Publisher Copyright: {\textcopyright} 2014SPST.",

year = "2014",

month = sep,

day = "13",

doi = "10.2494/photopolymer.27.415",

language = "English (US)",

volume = "27",

pages = "415--418",

journal = "Journal of Photopolymer Science and Technology",

issn = "0914-9244",

publisher = "Tokai University",

number = "4",

}

TY - JOUR

T1 - Block copolymers for DSA in the 100 Å regime

AU - Grant Willson, C.

AU - Blachut, Gregory

AU - Maher, Michael J.

AU - Durand, William J.

AU - Bates, Christopher M.

AU - Carlson, Matthew C.

AU - Self, Jeffrey L.

AU - Lane, Austin P.

AU - Asano, Yusuke

AU - Sirard, Stephen

AU - Hayes, Colin O.

AU - Ellison, Christopher J.

PY - 2014/9/13

Y1 - 2014/9/13

N2 - Block copolymers with lines and spaces in the 100 Å regime have been oriented using a perfectly neutral top coat and bottom coat and these structures have been successfully developed with RIE to provide high aspect ratio topographic features. Under these conditions, the materials can be annealed in less than 60 seconds. Future work will be directed toward continued increases in χ and development of simple and efficient processes for orienting these structures.

AB - Block copolymers with lines and spaces in the 100 Å regime have been oriented using a perfectly neutral top coat and bottom coat and these structures have been successfully developed with RIE to provide high aspect ratio topographic features. Under these conditions, the materials can be annealed in less than 60 seconds. Future work will be directed toward continued increases in χ and development of simple and efficient processes for orienting these structures.

KW - Block copolymers

KW - DSA

KW - Etching

KW - Lithography

UR - http://www.scopus.com/inward/record.url?scp=84907519343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907519343&partnerID=8YFLogxK

U2 - 10.2494/photopolymer.27.415

DO - 10.2494/photopolymer.27.415

M3 - Article

AN - SCOPUS:84907519343

SN - 0914-9244

VL - 27

SP - 415

EP - 418

JO - Journal of Photopolymer Science and Technology

JF - Journal of Photopolymer Science and Technology

IS - 4

ER -

Block copolymers for DSA in the 100 Å regime

Abstract

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Keywords

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