Abstract
p-type Sb-doped ZnO/i-CdZnO/n-type Ga-doped ZnO was grown by dual ion beam sputtering deposition system. Current-voltage characteristics of the heterojunction showed a diode-like rectifying behavior with a turn-on voltage of ∼5 V. The diode yielded blue electroluminescence emissions at around 446 nm in forward biased condition at room temperature. The emission intensity increased with the increase of the injection current. A red shifting of the emission peak position was observed with the increment of ambient temperature, indicating a change of band gap of the CdZnO active layer with temperature in low-temperature measurement.
Original language | English (US) |
---|---|
Pages (from-to) | 30983-30991 |
Number of pages | 9 |
Journal | Optics Express |
Volume | 22 |
Issue number | 25 |
DOIs | |
State | Published - Dec 15 2014 |
Bibliographical note
Publisher Copyright:© 2014 Optical Society of America.