Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback

R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani

doi:10.1016/j.sse.2014.07.003

Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback

R. Grassi, A. Gnudi, V. Di Lecce, E. Gnani, S. Reggiani, G. Baccarani

Electrical and Computer Engineering

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7 Scopus citations

Abstract

We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the device characteristics obtained from self-consistent ballistic quantum transport simulations, we explore the circuit parameter space and evaluate the amplifier performance in terms of dc voltage gain and voltage gain bandwidth. We show that the dc gain can be effectively improved by the negative differential resistance provided by the cross-coupled pair. Contact resistance is the main obstacle to achieving gain bandwidth products in the terahertz range. Limitations of the proposed amplifier are identified with its poor linearity and relatively large Miller capacitance.

Original language	English (US)
Pages (from-to)	54-60
Number of pages	7
Journal	Solid-State Electronics
Volume	100
DOIs	https://doi.org/10.1016/j.sse.2014.07.003
State	Published - Oct 2014

Bibliographical note

Funding Information:
This work has been supported by the EU project GRADE 317839.

Keywords

Differential amplifier
Gain enhancement
Graphene FET
Positive feedback
Radio-frequency operation

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AU - Grassi, R.

AU - Gnudi, A.

AU - Di Lecce, V.

AU - Gnani, E.

AU - Reggiani, S.

AU - Baccarani, G.

N1 - Funding Information: This work has been supported by the EU project GRADE 317839.

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N2 - We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the device characteristics obtained from self-consistent ballistic quantum transport simulations, we explore the circuit parameter space and evaluate the amplifier performance in terms of dc voltage gain and voltage gain bandwidth. We show that the dc gain can be effectively improved by the negative differential resistance provided by the cross-coupled pair. Contact resistance is the main obstacle to achieving gain bandwidth products in the terahertz range. Limitations of the proposed amplifier are identified with its poor linearity and relatively large Miller capacitance.

AB - We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the device characteristics obtained from self-consistent ballistic quantum transport simulations, we explore the circuit parameter space and evaluate the amplifier performance in terms of dc voltage gain and voltage gain bandwidth. We show that the dc gain can be effectively improved by the negative differential resistance provided by the cross-coupled pair. Contact resistance is the main obstacle to achieving gain bandwidth products in the terahertz range. Limitations of the proposed amplifier are identified with its poor linearity and relatively large Miller capacitance.

KW - Differential amplifier

KW - Gain enhancement

KW - Graphene FET

KW - Positive feedback

KW - Radio-frequency operation

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Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback

Abstract

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Keywords

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