Broadband microwave-based metrology platform development: Demonstration of in-situ failure mode diagnostic capabilities for integrated circuit reliability analyses

Lin You, Chukwudi A. Okoro, Jung Joon Ahn, Joseph Kopanski, Rhonda R. Franklin, Yaw S. Obeng

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non-destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of thermal cycling on the RF signal characteristics (insertion loss (S21) and return loss (S11)) is used to infer thermo-mechanical stress-induced defects in metal interconnects. The inferred defects are supported with physical analytical data where possible.

Original languageEnglish (US)
Pages (from-to)N3113-N3117
JournalECS Journal of Solid State Science and Technology
Volume4
Issue number1
DOIs
StatePublished - Jan 1 2015

Fingerprint

Dive into the research topics of 'Broadband microwave-based metrology platform development: Demonstration of in-situ failure mode diagnostic capabilities for integrated circuit reliability analyses'. Together they form a unique fingerprint.

Cite this