Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

Mandip J. Sibakoti; Sreejith Karthikeyan; Sehyun Hwang; Timothy Bontrager; Stephen A. Campbell

doi:10.1109/PVSC.2017.8366517

Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

Mandip J. Sibakoti, Sreejith Karthikeyan, Sehyun Hwang, Timothy Bontrager, Stephen A. Campbell

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The saturation of V_OC at larger band gaps in Cu(In, Ga)Se₂ devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the V_OC saturation in wide gap CIAGS devices to increased recombination rate at the interface.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1163-1168
Number of pages	6
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366517
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	6/25/17 → 6/30/17

Bibliographical note

Funding Information:
This project is supported by the Sunshot program of Department of Energy Sunshot program (Award DE-EE0005319). The device fabrication was performed in Minnesota Nano Center (MNC) under partial support of the National Nano Coordinated Infrastructure program at NSF.

Publisher Copyright:
© 2017 IEEE.

Keywords

CIAGS
CIGS
DLCP
DLTS
Electrical Characterization
SCAPS modeling
Wide band-gap solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2017.8366517

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Sibakoti, M. J., Karthikeyan, S., Hwang, S., Bontrager, T., & Campbell, S. A. (2017). Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1163-1168). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366517

Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. / Sibakoti, Mandip J.; Karthikeyan, Sreejith; Hwang, Sehyun et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1163-1168 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sibakoti, MJ, Karthikeyan, S, Hwang, S, Bontrager, T & Campbell, SA 2017, Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1163-1168, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366517

Sibakoti MJ, Karthikeyan S, Hwang S, Bontrager T, Campbell SA. Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1163-1168. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366517

Sibakoti, Mandip J. ; Karthikeyan, Sreejith ; Hwang, Sehyun et al. / Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1163-1168 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

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abstract = "The saturation of VOC at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.",

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AB - The saturation of VOC at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.

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Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

Abstract

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Bibliographical note

Keywords

UN SDGs

Access

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