A MEMS based piezoresistive strain sensor was designed, fabricated and calibrated. A single strip of doped n-polysilicon sensing material was patterned over a thin Si3N4/SiO2 membrane. The silicon wafer was etched beneath this thin membrane. The intent of this design was to fabricate a flexible MEMS strain sensor. A calibration technique for measuring the strain sensor performance is described. The sensor calibration technique (to find the relationship between change in resistance and strain) entails developing a repeatable relationship between the change in sensor resistance and the strain measured at the sensor. The sensor sensitivity is evaluated by embedding the sensor in a vinyl ester epoxy plate and loading the plate. This calibration technique captures the effects of strain transfer to the stiff silicon wafer.
|Original language||English (US)|
|Number of pages||7|
|Journal||Biennial University/Government/Industry Microelectronics Symposium - Proceedings|
|State||Published - 1999|
|Event||Proceedings of the 1999 13th Biennial University / Goverment / Industry Microelectronics Symposium (UGIM) - Minneapolis, MN, USA|
Duration: Jun 20 1999 → Jun 23 1999