Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. Chu, H. Chen, K. A. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Ieong, H. S. Wong

Research output: Contribution to conferencePaperpeer-review

188 Scopus citations

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