Characterization of anodic oxide film formed on TiN coating in neutral borate buffer solution

Kazuhisa Azumi; Shigeyo Watanabe; Masahiro Seo; Isao Saeki; Yukio Inokuchi; Patrick James; William H. Smyrl

doi:10.1016/S0010-938X(98)00031-6

Characterization of anodic oxide film formed on TiN coating in neutral borate buffer solution

Kazuhisa Azumi, Shigeyo Watanabe, Masahiro Seo, Isao Saeki, Yukio Inokuchi, Patrick James, William H. Smyrl

Chemical Engineering and Materials Science

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Abstract

Properties of the oxide layer formed on a TiN coating by anodic oxidation in neutral borate buffer solution were investigated using cyclic voltammetry, AFM, FT-IR, impedance and photocurrent measurements. The voltammogram showed imperfections in the TiN coating and high susceptibility of anodic oxidation. The result of FT-IR showed the composition of an oxide layer, similar to TiO₂, including OH^- or water. Both impedance and photocurrent results confirmed that the oxide film has n-type semiconductor properties. The oxide would contain defects acting as intergap states, resulting in low efficiency of photo-induced free-carrier generation. It seems that these defects have their origin in degradation of the protective property of a TiN coating under anodic polarization.

Original language	English (US)
Pages (from-to)	1363-1377
Number of pages	15
Journal	Corrosion Science
Volume	40
Issue number	8
DOIs	https://doi.org/10.1016/S0010-938X(98)00031-6
State	Published - Aug 1 1998

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title = "Characterization of anodic oxide film formed on TiN coating in neutral borate buffer solution",

abstract = "Properties of the oxide layer formed on a TiN coating by anodic oxidation in neutral borate buffer solution were investigated using cyclic voltammetry, AFM, FT-IR, impedance and photocurrent measurements. The voltammogram showed imperfections in the TiN coating and high susceptibility of anodic oxidation. The result of FT-IR showed the composition of an oxide layer, similar to TiO2, including OH- or water. Both impedance and photocurrent results confirmed that the oxide film has n-type semiconductor properties. The oxide would contain defects acting as intergap states, resulting in low efficiency of photo-induced free-carrier generation. It seems that these defects have their origin in degradation of the protective property of a TiN coating under anodic polarization.",

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T1 - Characterization of anodic oxide film formed on TiN coating in neutral borate buffer solution

AU - Azumi, Kazuhisa

AU - Watanabe, Shigeyo

AU - Seo, Masahiro

AU - Saeki, Isao

AU - Inokuchi, Yukio

AU - James, Patrick

AU - Smyrl, William H.

PY - 1998/8/1

Y1 - 1998/8/1

N2 - Properties of the oxide layer formed on a TiN coating by anodic oxidation in neutral borate buffer solution were investigated using cyclic voltammetry, AFM, FT-IR, impedance and photocurrent measurements. The voltammogram showed imperfections in the TiN coating and high susceptibility of anodic oxidation. The result of FT-IR showed the composition of an oxide layer, similar to TiO2, including OH- or water. Both impedance and photocurrent results confirmed that the oxide film has n-type semiconductor properties. The oxide would contain defects acting as intergap states, resulting in low efficiency of photo-induced free-carrier generation. It seems that these defects have their origin in degradation of the protective property of a TiN coating under anodic polarization.

AB - Properties of the oxide layer formed on a TiN coating by anodic oxidation in neutral borate buffer solution were investigated using cyclic voltammetry, AFM, FT-IR, impedance and photocurrent measurements. The voltammogram showed imperfections in the TiN coating and high susceptibility of anodic oxidation. The result of FT-IR showed the composition of an oxide layer, similar to TiO2, including OH- or water. Both impedance and photocurrent results confirmed that the oxide film has n-type semiconductor properties. The oxide would contain defects acting as intergap states, resulting in low efficiency of photo-induced free-carrier generation. It seems that these defects have their origin in degradation of the protective property of a TiN coating under anodic polarization.

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Characterization of anodic oxide film formed on TiN coating in neutral borate buffer solution

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