Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs)

Wei Xie; Feilong Liu; Sha Shi; P. Paul Ruden; C. Daniel Frisbie

doi:10.1002/adma.201304946

Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs)

Wei Xie, Feilong Liu, Sha Shi, P. Paul Ruden, C. Daniel Frisbie

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 10¹³ cm^-2 in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density.

Original language	English (US)
Pages (from-to)	2527-2532
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	16
DOIs	https://doi.org/10.1002/adma.201304946
State	Published - Apr 23 2014

Keywords

conductivity peak
effective medium approximation
electric double layer transistors (EDLTs)
electrolyte gating
traps

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title = "Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs)",

abstract = "A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 1013 cm-2 in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density.",

keywords = "conductivity peak, effective medium approximation, electric double layer transistors (EDLTs), electrolyte gating, traps",

author = "Wei Xie and Feilong Liu and Sha Shi and Ruden, {P. Paul} and Frisbie, {C. Daniel}",

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T1 - Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs)

AU - Xie, Wei

AU - Liu, Feilong

AU - Shi, Sha

AU - Ruden, P. Paul

AU - Frisbie, C. Daniel

PY - 2014/4/23

Y1 - 2014/4/23

N2 - A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 1013 cm-2 in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density.

AB - A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 1013 cm-2 in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density.

KW - conductivity peak

KW - effective medium approximation

KW - electric double layer transistors (EDLTs)

KW - electrolyte gating

KW - traps

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JO - Advanced Materials

JF - Advanced Materials

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ER -

Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs)

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