Charge trapping analysis in sputtered Bi_xSe_1-x based accumulation-mode FETs

Physics & Astronomy

• field effect transistors 100%
• trapping 98%
• traps 67%
• insulators 40%
• electric potential 39%
• high electron mobility transistors 18%
• semiconductor devices 18%
• oxide films 16%
• CMOS 16%
• polynomials 16%
• chemistry 15%
• leakage 15%
• photoelectron spectroscopy 14%
• inversions 14%
• hysteresis 14%
• conductivity 12%
• impurities 12%
• physics 11%
• electrical resistivity 11%
• oxides 11%
• oxygen 10%
• x rays 8%
• electrons 7%