Charge trapping and degradation properties of PZT thin films for MEMS

Engineering & Materials Science

• Charge trapping 100%
• Lead zirconate titanate 77%
• Thin films 60%
• MEMS 59%
• Degradation 44%
• Ferroelectric thin films 37%
• Charge injection 30%
• Fatigue of materials 29%
• Hysteresis loops 25%
• Leakage currents 22%
• Permittivity 21%
• Capacitance 18%
• Silicon 16%
• Decomposition 15%
• Metals 13%
• Electric potential 10%

Physics & Astronomy

• microelectromechanical systems 61%
• trapping 49%
• degradation 47%
• thin films 32%
• leakage 17%
• capacitance 16%
• hysteresis 16%
• decomposition 16%
• injection 15%
• permittivity 14%
• electric potential 11%
• silicon 11%
• metals 10%

Chemical Compounds

• Degradation Property 83%
• Leakage Current 27%
• Hysteresis 20%
• Dielectric Constant 19%
• Decomposition 13%