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It is of paramount importance to improve the control over large area growth of high quality molybdenum disulfide (MoS2) and other types of 2D dichalcogenides. Such atomically thin materials have great potential for use in electronics, and are thought to make possible the first real applications of spintronics. Here in, a facile and reproducible method of producing wafer scale atomically thin MoS2 layers has been developed using the incorporation of a chelating agent in a common organic solvent, dimethyl sulfoxide (DMSO). Previously, solution processing of a MoS2 precursor, ammonium tetrathiomolybdate ((NH4)2MoS4), and subsequent thermolysis was used to produce large area MoS2 layers. Our work here shows that the use of ethylenediaminetetraacetic acid (EDTA) in DMSO exerts superior control over wafer coverage and film thickness, and the results demonstrate that the chelating action and dispersing effect of EDTA is critical in growing uniform films. Raman spectroscopy, photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and high-resolution scanning transmission electron microscopy (HR-STEM) indicate the formation of homogenous few layer MoS2 films at the wafer scale, resulting from the novel chelant-in-solution method.
Bibliographical noteFunding Information:
Financial support for this work was provided by the STARnet center, C-SPIN (Center for Spintronic Materials, Interfaces, and Novel Architectures), through the SRC (Semiconductor Research Corporation) sponsored by the MARCO (Microelectronics Advanced Research Corporation) and the DARPA (Defense Advanced Research Projects Agency). XPS (X-ray photoelectron spectroscopy) data were acquired with equipment funded by the NSF (National Science Foundation) under the Major Research Instrumentation Program (NSF grant no. DMR- 0958796). STEM (Scanning Transmission Electron Microscopy) analysis was carried out in the Characterization Facility of the University of Minnesota, which receives partial support from NSF through the MRSEC program (NSF grant no. DMR-0819885).
© 2017 The Author(s).
How much support was provided by MRSEC?
Reporting period for MRSEC
- Period 4
PubMed: MeSH publication types
- Journal Article