Chemical vapor deposition (CVD) of Al from dimethylethylamine alane on atomically clean GaAs(100)2×4 surfaces has been investigated using an ultra-high-vacuum CVD reactor. Film composition, microstructure and growth rate were examined for deposition temperatures in the 100-500 °C range. The results indicate reduced impurity incorporation at the lower deposition temperatures, and growth rates that are relatively temperature-independent in the low-pressure regime examined (10-4 to 10-5 Torr). At temperatures ≥400 °C the microstructure of films deposited by CVD and evaporation is remarkably similar, but at the lower deposition temperatures (approximately 150 °C) the specific chemistry of the CVD process affects the film texture and preferential orientation.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 1996|
|Event||Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA|
Duration: Apr 8 1996 → Apr 12 1996