Chemical vapor deposition of Al films from dimethylethylamine alane on GaAs(100)2×4 surfaces

I. Karpov, J. Campbell, W. Gladfelter, A. Franciosi

Research output: Contribution to journalConference articlepeer-review

Abstract

Chemical vapor deposition (CVD) of Al from dimethylethylamine alane on atomically clean GaAs(100)2×4 surfaces has been investigated using an ultra-high-vacuum CVD reactor. Film composition, microstructure and growth rate were examined for deposition temperatures in the 100-500 °C range. The results indicate reduced impurity incorporation at the lower deposition temperatures, and growth rates that are relatively temperature-independent in the low-pressure regime examined (10-4 to 10-5 Torr). At temperatures ≥400 °C the microstructure of films deposited by CVD and evaporation is remarkably similar, but at the lower deposition temperatures (approximately 150 °C) the specific chemistry of the CVD process affects the film texture and preferential orientation.

Original languageEnglish (US)
Pages (from-to)277-282
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume427
DOIs
StatePublished - Jan 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

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