This paper presents the design, characterization, and modeling of a power electronic converter based around Silicon Carbide (SiC) MOSFETs. A practical characterization procedure is proposed which takes a circuit-level approach, as opposed to a device-level approach, using only the power electronic circuit and no additional test circuitry. The converter circuit is general enough that it can represent a dc chopper circuit or an output phase of an inverter. The design of the converter, including the SiC-specific gate drive circuit, is described. The hardware setup was operated at frequencies up to 200 kHz and efficiencies up to approximately 99% were recorded. A model for predicting converter and driver losses at different load currents, dc bus voltages, and operating temperatures was constructed; the predictions from the model were in good agreement with the measurements.
|Original language||English (US)|
|Title of host publication||IECON Proceedings (Industrial Electronics Conference)|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||7|
|State||Published - Feb 24 2014|
|Name||IECON Proceedings (Industrial Electronics Conference)|
Bibliographical notePublisher Copyright:
© 2014 IEEE.
- Gate drive
- Loss estimation
- Practical characterization
- SiC device