Abstract
This paper presents the design, characterization, and modeling of a power electronic converter based around Silicon Carbide (SiC) MOSFETs. A practical characterization procedure is proposed which takes a circuit-level approach, as opposed to a device-level approach, using only the power electronic circuit and no additional test circuitry. The converter circuit is general enough that it can represent a dc chopper circuit or an output phase of an inverter. The design of the converter, including the SiC-specific gate drive circuit, is described. The hardware setup was operated at frequencies up to 200 kHz and efficiencies up to approximately 99% were recorded. A model for predicting converter and driver losses at different load currents, dc bus voltages, and operating temperatures was constructed; the predictions from the model were in good agreement with the measurements.
Original language | English (US) |
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Title of host publication | IECON Proceedings (Industrial Electronics Conference) |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1291-1297 |
Number of pages | 7 |
ISBN (Electronic) | 9781479940325 |
DOIs | |
State | Published - Feb 24 2014 |
Publication series
Name | IECON Proceedings (Industrial Electronics Conference) |
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Bibliographical note
Publisher Copyright:© 2014 IEEE.
Keywords
- Gate drive
- Loss estimation
- Practical characterization
- SiC device