Abstract
A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250°C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | R.A. Potyrailo, A. Karim, Q. Wang, T. Chikyow |
Pages | 15-19 |
Number of pages | 5 |
Volume | 804 |
State | Published - 2003 |
Event | Combinatorial and Artificial Intelligence Methods in Materials Science II - Boston, MA., United States Duration: Dec 1 2003 → Dec 4 2003 |
Other
Other | Combinatorial and Artificial Intelligence Methods in Materials Science II |
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Country/Territory | United States |
City | Boston, MA. |
Period | 12/1/03 → 12/4/03 |