Combinatorial CVD of zirconium, hafnium, and tin dioxide mixtures for applications as high-κ materials

Bin Xia; Fang Chen; Stephen A. Campbell; Jeffrey T. Roberts; Wayne L. Gladfelter

doi:10.1002/cvde.200306287

Combinatorial CVD of zirconium, hafnium, and tin dioxide mixtures for applications as high-κ materials

Bin Xia, Fang Chen, Stephen A. Campbell, Jeffrey T. Roberts, Wayne L. Gladfelter

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A low-pressure CVD reactor was modified to create continuous compositional spreads of ZrO₂/HfO₂/SnO₂ on a single Si(100) wafer. Anhydrous metal nitrates were used as single-source precursors to grow the films, and the compositions were mapped using Rutherford backscattering spectroscopy (RBS). An array of 100 × 100 μm² capacitors was used to map the dielectric constant. High dielectric constants were observed for the films having high ZrO₂ concentrations, while high SnO ₂ concentrations correlated with low values of κ.

Original language	English (US)
Pages (from-to)	195-200
Number of pages	6
Journal	Chemical Vapor Deposition
Volume	10
Issue number	4
DOIs	https://doi.org/10.1002/cvde.200306287
State	Published - Sep 2004

Keywords

Combinatorial
Dielectric
Metal oxide

Access

10.1002/cvde.200306287

OpenUrl availability

Full text

Cite this

@article{2d514c2d2de8410c8fee8cd43ee123a2,

title = "Combinatorial CVD of zirconium, hafnium, and tin dioxide mixtures for applications as high-κ materials",

abstract = "A low-pressure CVD reactor was modified to create continuous compositional spreads of ZrO2/HfO2/SnO2 on a single Si(100) wafer. Anhydrous metal nitrates were used as single-source precursors to grow the films, and the compositions were mapped using Rutherford backscattering spectroscopy (RBS). An array of 100 × 100 μm2 capacitors was used to map the dielectric constant. High dielectric constants were observed for the films having high ZrO2 concentrations, while high SnO 2 concentrations correlated with low values of κ.",

keywords = "Combinatorial, Dielectric, Metal oxide",

author = "Bin Xia and Fang Chen and Campbell, {Stephen A.} and Roberts, {Jeffrey T.} and Gladfelter, {Wayne L.}",

year = "2004",

month = sep,

doi = "10.1002/cvde.200306287",

language = "English (US)",

volume = "10",

pages = "195--200",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - Combinatorial CVD of zirconium, hafnium, and tin dioxide mixtures for applications as high-κ materials

AU - Xia, Bin

AU - Chen, Fang

AU - Campbell, Stephen A.

AU - Roberts, Jeffrey T.

AU - Gladfelter, Wayne L.

PY - 2004/9

Y1 - 2004/9

N2 - A low-pressure CVD reactor was modified to create continuous compositional spreads of ZrO2/HfO2/SnO2 on a single Si(100) wafer. Anhydrous metal nitrates were used as single-source precursors to grow the films, and the compositions were mapped using Rutherford backscattering spectroscopy (RBS). An array of 100 × 100 μm2 capacitors was used to map the dielectric constant. High dielectric constants were observed for the films having high ZrO2 concentrations, while high SnO 2 concentrations correlated with low values of κ.

AB - A low-pressure CVD reactor was modified to create continuous compositional spreads of ZrO2/HfO2/SnO2 on a single Si(100) wafer. Anhydrous metal nitrates were used as single-source precursors to grow the films, and the compositions were mapped using Rutherford backscattering spectroscopy (RBS). An array of 100 × 100 μm2 capacitors was used to map the dielectric constant. High dielectric constants were observed for the films having high ZrO2 concentrations, while high SnO 2 concentrations correlated with low values of κ.

KW - Combinatorial

KW - Dielectric

KW - Metal oxide

UR - http://www.scopus.com/inward/record.url?scp=6344230100&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344230100&partnerID=8YFLogxK

U2 - 10.1002/cvde.200306287

DO - 10.1002/cvde.200306287

M3 - Article

AN - SCOPUS:6344230100

SN - 0948-1907

VL - 10

SP - 195

EP - 200

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 4

ER -

Combinatorial CVD of zirconium, hafnium, and tin dioxide mixtures for applications as high-κ materials

Abstract

Keywords

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this