Comparison of GaAs MESFET And GaAs p-i-n Diodes as Switch Elements

A. Gopinath

doi:10.1109/EDL.1985.26210

Comparison of GaAs MESFET And GaAs p-i-n Diodes as Switch Elements

A. Gopinath

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The Kurokawa-Schlosser quality factor Q is used to compare the GaAs MESFET switch with the GaAs p-i-n diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q is calculated from an approximate expression. The GaAs p-i-n has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs p-i-n has the higher Q and therefore should have improved characteristics as a switch in terms of insertion loss and isolation.

Original language	English (US)
Pages (from-to)	505-506
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	6
Issue number	10
DOIs	https://doi.org/10.1109/EDL.1985.26210
State	Published - Oct 1985

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abstract = "The Kurokawa-Schlosser quality factor Q is used to compare the GaAs MESFET switch with the GaAs p-i-n diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q is calculated from an approximate expression. The GaAs p-i-n has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs p-i-n has the higher Q and therefore should have improved characteristics as a switch in terms of insertion loss and isolation.",

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AB - The Kurokawa-Schlosser quality factor Q is used to compare the GaAs MESFET switch with the GaAs p-i-n diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q is calculated from an approximate expression. The GaAs p-i-n has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs p-i-n has the higher Q and therefore should have improved characteristics as a switch in terms of insertion loss and isolation.

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Comparison of GaAs MESFET And GaAs p-i-n Diodes as Switch Elements

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