Comparison of spin valve effect and anisotropic magnetoresistance in Co/Cu multilayer films

Youjun Chen; J. M. Florczak; E. Dan Dahlberg

doi:10.1016/0304-8853(92)91599-O

Comparison of spin valve effect and anisotropic magnetoresistance in Co/Cu multilayer films

Youjun Chen, J. M. Florczak, E. Dan Dahlberg

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A series of Co/Cu multilayer films was prepared using dc magnetron sputtering. Magnetoresistance measurements indicated the presence of the spin valve or giant magnetoresistance (GMR) effect, and magnetometer studies showed the presence of the antiferromagnetic coupling between the cobalt layers in the samples. The anisotropic magnetoresistance (AMR) was measured at different applied magnetic fields. The field dependence of the AMR was consistent with the model of alternating layers being antiferromagnetically coupled. The data are compared to the predictions of the two current model of the GMR.

Original language	English (US)
Pages (from-to)	1907-1908
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	104-107
Issue number	PART 3
DOIs	https://doi.org/10.1016/0304-8853(92)91599-O
State	Published - Feb 2 1992

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abstract = "A series of Co/Cu multilayer films was prepared using dc magnetron sputtering. Magnetoresistance measurements indicated the presence of the spin valve or giant magnetoresistance (GMR) effect, and magnetometer studies showed the presence of the antiferromagnetic coupling between the cobalt layers in the samples. The anisotropic magnetoresistance (AMR) was measured at different applied magnetic fields. The field dependence of the AMR was consistent with the model of alternating layers being antiferromagnetically coupled. The data are compared to the predictions of the two current model of the GMR.",

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N2 - A series of Co/Cu multilayer films was prepared using dc magnetron sputtering. Magnetoresistance measurements indicated the presence of the spin valve or giant magnetoresistance (GMR) effect, and magnetometer studies showed the presence of the antiferromagnetic coupling between the cobalt layers in the samples. The anisotropic magnetoresistance (AMR) was measured at different applied magnetic fields. The field dependence of the AMR was consistent with the model of alternating layers being antiferromagnetically coupled. The data are compared to the predictions of the two current model of the GMR.

AB - A series of Co/Cu multilayer films was prepared using dc magnetron sputtering. Magnetoresistance measurements indicated the presence of the spin valve or giant magnetoresistance (GMR) effect, and magnetometer studies showed the presence of the antiferromagnetic coupling between the cobalt layers in the samples. The anisotropic magnetoresistance (AMR) was measured at different applied magnetic fields. The field dependence of the AMR was consistent with the model of alternating layers being antiferromagnetically coupled. The data are compared to the predictions of the two current model of the GMR.

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Comparison of spin valve effect and anisotropic magnetoresistance in Co/Cu multilayer films

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