Conductance fluctuations in doped hydrogenated amorphous silicon

C. E. Parman, N. E. Israeloff, J. Kakalios

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Abstract

Conductance fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) films are described. The spectral density of the coplanar current fluctuations has a 1/f frequency dependence for frequency f from 1<f<104 Hz over the temperature range 300<T<450 K. The noise power density displays a power-law dependence on the dc current passing through the film, with a temperature-dependent power-law exponent. Random telegraph switching noise is observed in coplanar current measurements in samples with effective volumes of 10-6 to 10-7 cm3 with fluctuations as large as ΔR/R∼1%. Statistical analysis of these fluctuations indicates that the 1/f noise is strongly non-Gaussian, suggestive of cooperative interactions between fluctuators. A model is proposed in which the noise is dominated by inhomogeneous current paths whose local conductivity is modulated by bonding rearrangements enabled by hydrogen motion.

Original languageEnglish (US)
Pages (from-to)12578-12589
Number of pages12
JournalPhysical Review B
Volume47
Issue number19
DOIs
StatePublished - Jan 1 1993

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