TY - JOUR
T1 - Conductance-noise power fluctuations in hydrogenated amorphous silicon
AU - Parman, C. E.
AU - Israeloff, N. E.
AU - Kakalios, J.
PY - 1992
Y1 - 1992
N2 - The power spectra of the 1/f noise in n-type-doped hydrogenated amorphous silicon (a-Si:H) are themselves time dependent. The noise power changes both in magnitude and as a function of frequency, reflecting a modulation of the properties of the fluctuators responsible for the current noise. Slow variations of the noise are strongly correlated over a broad range of frequencies. Spectral analysis of these noise power fluctuations, termed second spectra, also shows an approximate 1/f spectral slope, that is, the 1/f noise has 1/f noise. These results indicate that highly cooperative interactions exist between the fluctuators.
AB - The power spectra of the 1/f noise in n-type-doped hydrogenated amorphous silicon (a-Si:H) are themselves time dependent. The noise power changes both in magnitude and as a function of frequency, reflecting a modulation of the properties of the fluctuators responsible for the current noise. Slow variations of the noise are strongly correlated over a broad range of frequencies. Spectral analysis of these noise power fluctuations, termed second spectra, also shows an approximate 1/f spectral slope, that is, the 1/f noise has 1/f noise. These results indicate that highly cooperative interactions exist between the fluctuators.
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U2 - 10.1103/PhysRevLett.69.1097
DO - 10.1103/PhysRevLett.69.1097
M3 - Article
AN - SCOPUS:0001306455
SN - 0031-9007
VL - 69
SP - 1097
EP - 1100
JO - Physical review letters
JF - Physical review letters
IS - 7
ER -