Controlled deposition of SiO2 nanoparticles of NIST-traceable particle sizes for mask surface inspection system characterization

Se Jin Yook; Heinz Fissan; Thomas Engelke; Christof Asbach; Till Van Der Zwaag; Jung Hyeun Kim; Florence Eschbach; Jing Wang; David Y.H. Pui

doi:10.1109/TSM.2008.2000266

Controlled deposition of SiO₂ nanoparticles of NIST-traceable particle sizes for mask surface inspection system characterization

Se Jin Yook, Heinz Fissan, Thomas Engelke, Christof Asbach, Till Van Der Zwaag, Jung Hyeun Kim, Florence Eschbach, Jing Wang, David Y.H. Pui

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Particulate contamination of masks is a serious challenge in extreme ultraviolet lithography (EUVL) technology due to the unavailability of conventional pellicles. EUVL mask surface inspection tools, operated at low pressure, are used not only for mask contamination control/monitoring but also for mask surface cleaning studies. In EUVL, contaminant particles can be generated during low-pressure stages of integrated circuit (IC) manufacturing and may contaminate the mask critical surface without protective pellicles. It is therefore needed to characterize the EUVL mask surface inspection tools with contaminants commonly seen in vacuum processes. We have developed a method to deposit particles of known material and NIST-traceable sizes on the mask surface for the purpose of calibrating the EUVL mask surface inspection tools. Our method can produce particles with 98% size-uniformity. SiO₂ particles with NIST-traceable sizes of 50 nm, 60 nm, and 70 nm were separately deposited on quartz mask blanks with a controlled deposition spot size and number density, and detected by a Lasertec M1350 mask surface scanner. The results demonstrate high capture efficiencies for 60 and 70 nm SiO₂ particles, and significantly lower capture efficiency for 50 nm SiO₂ particles. The sizing accuracy of Lasertec M1350 deteriorates with decreasing particle size.

Original language	English (US)
Article number	4512067
Pages (from-to)	238-243
Number of pages	6
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	21
Issue number	2
DOIs	https://doi.org/10.1109/TSM.2008.2000266
State	Published - May 2008

Bibliographical note

Funding Information:
Manuscript received August 2, 2007; revised February 13, 2008. This work was supported by Intel Corporation. S.-J. Yook is with the School of Mechanical Engineering, Hanyang University, Seoul 133-791, Korea. H. Fissan, T. Engelke, C. Asbach, and T. van der Zwaag are with the Institute of Energy and Environmental Technology e.V. (IUTA), 47229 Duisburg, Germany. J. H. Kim is with the Department of Chemical Engineering, University of Seoul, Seoul 130-743, Korea. F. Eschbach is with the Intel Mask Operations, Intel Corporation, Santa Clara, CA 95054 USA. J. Wang and D. Y. H. Pui are with the Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: dyhpui@umn. edu). Digital Object Identifier 10.1109/TSM.2008.2000266

Keywords

Monodisperse particle generation
NIST-traceable particle size
Nanoparticles
Particle deposition on masks
SiO particles

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access

10.1109/TSM.2008.2000266

OpenUrl availability

Full text

Cite this

Yook, S. J., Fissan, H., Engelke, T., Asbach, C., Van Der Zwaag, T., Kim, J. H., Eschbach, F., Wang, J., & Pui, D. Y. H. (2008). Controlled deposition of SiO₂ nanoparticles of NIST-traceable particle sizes for mask surface inspection system characterization. IEEE Transactions on Semiconductor Manufacturing, 21(2), 238-243. Article 4512067. https://doi.org/10.1109/TSM.2008.2000266

@article{41daf3a58fb744089dc584b918951f42,

title = "Controlled deposition of SiO2 nanoparticles of NIST-traceable particle sizes for mask surface inspection system characterization",

abstract = "Particulate contamination of masks is a serious challenge in extreme ultraviolet lithography (EUVL) technology due to the unavailability of conventional pellicles. EUVL mask surface inspection tools, operated at low pressure, are used not only for mask contamination control/monitoring but also for mask surface cleaning studies. In EUVL, contaminant particles can be generated during low-pressure stages of integrated circuit (IC) manufacturing and may contaminate the mask critical surface without protective pellicles. It is therefore needed to characterize the EUVL mask surface inspection tools with contaminants commonly seen in vacuum processes. We have developed a method to deposit particles of known material and NIST-traceable sizes on the mask surface for the purpose of calibrating the EUVL mask surface inspection tools. Our method can produce particles with 98% size-uniformity. SiO2 particles with NIST-traceable sizes of 50 nm, 60 nm, and 70 nm were separately deposited on quartz mask blanks with a controlled deposition spot size and number density, and detected by a Lasertec M1350 mask surface scanner. The results demonstrate high capture efficiencies for 60 and 70 nm SiO2 particles, and significantly lower capture efficiency for 50 nm SiO2 particles. The sizing accuracy of Lasertec M1350 deteriorates with decreasing particle size.",

keywords = "Monodisperse particle generation, NIST-traceable particle size, Nanoparticles, Particle deposition on masks, SiO particles",

author = "Yook, {Se Jin} and Heinz Fissan and Thomas Engelke and Christof Asbach and {Van Der Zwaag}, Till and Kim, {Jung Hyeun} and Florence Eschbach and Jing Wang and Pui, {David Y.H.}",

note = "Funding Information: Manuscript received August 2, 2007; revised February 13, 2008. This work was supported by Intel Corporation. S.-J. Yook is with the School of Mechanical Engineering, Hanyang University, Seoul 133-791, Korea. H. Fissan, T. Engelke, C. Asbach, and T. van der Zwaag are with the Institute of Energy and Environmental Technology e.V. (IUTA), 47229 Duisburg, Germany. J. H. Kim is with the Department of Chemical Engineering, University of Seoul, Seoul 130-743, Korea. F. Eschbach is with the Intel Mask Operations, Intel Corporation, Santa Clara, CA 95054 USA. J. Wang and D. Y. H. Pui are with the Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: dyhpui@umn. edu). Digital Object Identifier 10.1109/TSM.2008.2000266",

year = "2008",

month = may,

doi = "10.1109/TSM.2008.2000266",

language = "English (US)",

volume = "21",

pages = "238--243",

journal = "IEEE Transactions on Semiconductor Manufacturing",

issn = "0894-6507",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Controlled deposition of SiO2 nanoparticles of NIST-traceable particle sizes for mask surface inspection system characterization

AU - Yook, Se Jin

AU - Fissan, Heinz

AU - Engelke, Thomas

AU - Asbach, Christof

AU - Van Der Zwaag, Till

AU - Kim, Jung Hyeun

AU - Eschbach, Florence

AU - Wang, Jing

AU - Pui, David Y.H.

N1 - Funding Information: Manuscript received August 2, 2007; revised February 13, 2008. This work was supported by Intel Corporation. S.-J. Yook is with the School of Mechanical Engineering, Hanyang University, Seoul 133-791, Korea. H. Fissan, T. Engelke, C. Asbach, and T. van der Zwaag are with the Institute of Energy and Environmental Technology e.V. (IUTA), 47229 Duisburg, Germany. J. H. Kim is with the Department of Chemical Engineering, University of Seoul, Seoul 130-743, Korea. F. Eschbach is with the Intel Mask Operations, Intel Corporation, Santa Clara, CA 95054 USA. J. Wang and D. Y. H. Pui are with the Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: dyhpui@umn. edu). Digital Object Identifier 10.1109/TSM.2008.2000266

PY - 2008/5

Y1 - 2008/5

N2 - Particulate contamination of masks is a serious challenge in extreme ultraviolet lithography (EUVL) technology due to the unavailability of conventional pellicles. EUVL mask surface inspection tools, operated at low pressure, are used not only for mask contamination control/monitoring but also for mask surface cleaning studies. In EUVL, contaminant particles can be generated during low-pressure stages of integrated circuit (IC) manufacturing and may contaminate the mask critical surface without protective pellicles. It is therefore needed to characterize the EUVL mask surface inspection tools with contaminants commonly seen in vacuum processes. We have developed a method to deposit particles of known material and NIST-traceable sizes on the mask surface for the purpose of calibrating the EUVL mask surface inspection tools. Our method can produce particles with 98% size-uniformity. SiO2 particles with NIST-traceable sizes of 50 nm, 60 nm, and 70 nm were separately deposited on quartz mask blanks with a controlled deposition spot size and number density, and detected by a Lasertec M1350 mask surface scanner. The results demonstrate high capture efficiencies for 60 and 70 nm SiO2 particles, and significantly lower capture efficiency for 50 nm SiO2 particles. The sizing accuracy of Lasertec M1350 deteriorates with decreasing particle size.

AB - Particulate contamination of masks is a serious challenge in extreme ultraviolet lithography (EUVL) technology due to the unavailability of conventional pellicles. EUVL mask surface inspection tools, operated at low pressure, are used not only for mask contamination control/monitoring but also for mask surface cleaning studies. In EUVL, contaminant particles can be generated during low-pressure stages of integrated circuit (IC) manufacturing and may contaminate the mask critical surface without protective pellicles. It is therefore needed to characterize the EUVL mask surface inspection tools with contaminants commonly seen in vacuum processes. We have developed a method to deposit particles of known material and NIST-traceable sizes on the mask surface for the purpose of calibrating the EUVL mask surface inspection tools. Our method can produce particles with 98% size-uniformity. SiO2 particles with NIST-traceable sizes of 50 nm, 60 nm, and 70 nm were separately deposited on quartz mask blanks with a controlled deposition spot size and number density, and detected by a Lasertec M1350 mask surface scanner. The results demonstrate high capture efficiencies for 60 and 70 nm SiO2 particles, and significantly lower capture efficiency for 50 nm SiO2 particles. The sizing accuracy of Lasertec M1350 deteriorates with decreasing particle size.

KW - Monodisperse particle generation

KW - NIST-traceable particle size

KW - Nanoparticles

KW - Particle deposition on masks

KW - SiO particles

UR - http://www.scopus.com/inward/record.url?scp=43849094970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43849094970&partnerID=8YFLogxK

U2 - 10.1109/TSM.2008.2000266

DO - 10.1109/TSM.2008.2000266

M3 - Article

AN - SCOPUS:43849094970

SN - 0894-6507

VL - 21

SP - 238

EP - 243

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 2

M1 - 4512067

ER -