Correlation between soft annealing conditions and structural, microstructural, morphological, and optical properties of CuInS2 thin films prepared by sulfurization of stacked precursor

Seung Wook Shin; K. V. Gurav; Myeng Gil Gang; M. P. Suryawanshi; P. S. Patil; G. L. Agawane; Chae Hwan Jeoung; Jae Ho Yun; Jeong Yong Lee; Jin Hyeok Kim

doi:10.1016/j.jcrysgro.2014.02.001

Correlation between soft annealing conditions and structural, microstructural, morphological, and optical properties of CuInS₂ thin films prepared by sulfurization of stacked precursor

Seung Wook Shin, K. V. Gurav, Myeng Gil Gang, M. P. Suryawanshi, P. S. Patil, G. L. Agawane, Chae Hwan Jeoung, Jae Ho Yun, Jeong Yong Lee, Jin Hyeok Kim

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

CuInS₂ (CIS) thin films were prepared by sulfurization of In/Cu stacked precursor films. Prior to sulfurization the stacked metallic precursors were subjected to the soft annealing in Ar atmosphere at different time (10, 30, and 60 min) and temperature (100 C and 300 C). The effect of soft annealing condition on the structural, morphological and optical properties of CIS films was investigated. X-ray diffraction, Raman, and X-ray photoelectron spectroscopy studies showed that the sulfurized thin films exhibited a CIS tetragonal structure with minor secondary phases such as Cu_2-xS and CuIn ₅S₈. The secondary phases were minimized by introducing soft annealed process in the CIS thin films. Void free CIS microstructures have been observed for soft annealed CIS films. The band gap energy of CIS films were increased from 1.37 to 1.5 eV depending on the soft annealing conditions.

Original language	English (US)
Pages (from-to)	49-54
Number of pages	6
Journal	Journal of Crystal Growth
Volume	394
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.02.001
State	Published - May 15 2014
Externally published	Yes

Bibliographical note

Funding Information:
This work is supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant funded by the Korea government Ministry of Knowledge Economy (No. 20124010203180 ) and partially supported by a Grant from the Fundamental R&D program for Core Technology of Materials funded by the Ministry of Knowledge Economy ( 10037233 ).

Keywords

A1. High resolution X-ray diffraction
B1. Inorganic compounds
B2. Semiconducting materials
B3. Solar cells

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.jcrysgro.2014.02.001

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Shin, S. W., Gurav, K. V., Gang, M. G., Suryawanshi, M. P., Patil, P. S., Agawane, G. L., Jeoung, C. H., Yun, J. H., Lee, J. Y., & Kim, J. H. (2014). Correlation between soft annealing conditions and structural, microstructural, morphological, and optical properties of CuInS₂ thin films prepared by sulfurization of stacked precursor. Journal of Crystal Growth, 394, 49-54. https://doi.org/10.1016/j.jcrysgro.2014.02.001

Correlation between soft annealing conditions and structural, microstructural, morphological, and optical properties of CuInS₂ thin films prepared by sulfurization of stacked precursor. / Shin, Seung Wook; Gurav, K. V.; Gang, Myeng Gil et al.
In: Journal of Crystal Growth, Vol. 394, 15.05.2014, p. 49-54.

Research output: Contribution to journal › Article › peer-review

Shin, SW, Gurav, KV, Gang, MG, Suryawanshi, MP, Patil, PS, Agawane, GL, Jeoung, CH, Yun, JH, Lee, JY & Kim, JH 2014, 'Correlation between soft annealing conditions and structural, microstructural, morphological, and optical properties of CuInS₂ thin films prepared by sulfurization of stacked precursor', Journal of Crystal Growth, vol. 394, pp. 49-54. https://doi.org/10.1016/j.jcrysgro.2014.02.001

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title = "Correlation between soft annealing conditions and structural, microstructural, morphological, and optical properties of CuInS2 thin films prepared by sulfurization of stacked precursor",

abstract = "CuInS2 (CIS) thin films were prepared by sulfurization of In/Cu stacked precursor films. Prior to sulfurization the stacked metallic precursors were subjected to the soft annealing in Ar atmosphere at different time (10, 30, and 60 min) and temperature (100 C and 300 C). The effect of soft annealing condition on the structural, morphological and optical properties of CIS films was investigated. X-ray diffraction, Raman, and X-ray photoelectron spectroscopy studies showed that the sulfurized thin films exhibited a CIS tetragonal structure with minor secondary phases such as Cu2-xS and CuIn 5S8. The secondary phases were minimized by introducing soft annealed process in the CIS thin films. Void free CIS microstructures have been observed for soft annealed CIS films. The band gap energy of CIS films were increased from 1.37 to 1.5 eV depending on the soft annealing conditions.",

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note = "Funding Information: This work is supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant funded by the Korea government Ministry of Knowledge Economy (No. 20124010203180 ) and partially supported by a Grant from the Fundamental R&D program for Core Technology of Materials funded by the Ministry of Knowledge Economy ( 10037233 ).",

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AU - Agawane, G. L.

AU - Jeoung, Chae Hwan

AU - Yun, Jae Ho

AU - Lee, Jeong Yong

AU - Kim, Jin Hyeok

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N2 - CuInS2 (CIS) thin films were prepared by sulfurization of In/Cu stacked precursor films. Prior to sulfurization the stacked metallic precursors were subjected to the soft annealing in Ar atmosphere at different time (10, 30, and 60 min) and temperature (100 C and 300 C). The effect of soft annealing condition on the structural, morphological and optical properties of CIS films was investigated. X-ray diffraction, Raman, and X-ray photoelectron spectroscopy studies showed that the sulfurized thin films exhibited a CIS tetragonal structure with minor secondary phases such as Cu2-xS and CuIn 5S8. The secondary phases were minimized by introducing soft annealed process in the CIS thin films. Void free CIS microstructures have been observed for soft annealed CIS films. The band gap energy of CIS films were increased from 1.37 to 1.5 eV depending on the soft annealing conditions.

AB - CuInS2 (CIS) thin films were prepared by sulfurization of In/Cu stacked precursor films. Prior to sulfurization the stacked metallic precursors were subjected to the soft annealing in Ar atmosphere at different time (10, 30, and 60 min) and temperature (100 C and 300 C). The effect of soft annealing condition on the structural, morphological and optical properties of CIS films was investigated. X-ray diffraction, Raman, and X-ray photoelectron spectroscopy studies showed that the sulfurized thin films exhibited a CIS tetragonal structure with minor secondary phases such as Cu2-xS and CuIn 5S8. The secondary phases were minimized by introducing soft annealed process in the CIS thin films. Void free CIS microstructures have been observed for soft annealed CIS films. The band gap energy of CIS films were increased from 1.37 to 1.5 eV depending on the soft annealing conditions.

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