Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit

Matthew C. Robbins, Steven J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present black phosphorus (BP) TFETs with transport directions aligned to the armchair and zigzag crystal orientations of a 9 nm BP channel fabricated using a triple-gate device structure. Strong (∼104) band-to-band-tunneling anisotropy is observed between the two crystal orientations. Furthermore, we observe a subthreshold slope nearing the thermionic limit of 22 mV/dec at 110 K, a step towards realizing subthermionic SS in BP-TFETs.

Original languageEnglish (US)
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15.7.1-15.7.4
ISBN (Electronic)9781538635599
DOIs
StatePublished - Jan 23 2018
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: Dec 2 2017Dec 6 2017

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/TerritoryUnited States
CitySan Francisco
Period12/2/1712/6/17

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by the NSF through the University of Minnesota MRSEC under Award No. DMR-1420013, DTRA under Award No. HDTRA1-14-1-0042, and the AFOSR under Award No. FA9550-14-1-0277. Device fabrication was performed at the Minnesota Nanofabrication Center at the University of Minnesota, which receives partial support from the NSF through the National Nanotechnology Coordinated Infrastructure (NNCI).

Publisher Copyright:
© 2017 IEEE.

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