We present black phosphorus (BP) TFETs with transport directions aligned to the armchair and zigzag crystal orientations of a 9 nm BP channel fabricated using a triple-gate device structure. Strong (∼104) band-to-band-tunneling anisotropy is observed between the two crystal orientations. Furthermore, we observe a subthreshold slope nearing the thermionic limit of 22 mV/dec at 110 K, a step towards realizing subthermionic SS in BP-TFETs.
|Original language||English (US)|
|Title of host publication||2017 IEEE International Electron Devices Meeting, IEDM 2017|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Jan 23 2018|
|Event||63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States|
Duration: Dec 2 2017 → Dec 6 2017
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Other||63rd IEEE International Electron Devices Meeting, IEDM 2017|
|Period||12/2/17 → 12/6/17|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This work was supported by the NSF through the University of Minnesota MRSEC under Award No. DMR-1420013, DTRA under Award No. HDTRA1-14-1-0042, and the AFOSR under Award No. FA9550-14-1-0277. Device fabrication was performed at the Minnesota Nanofabrication Center at the University of Minnesota, which receives partial support from the NSF through the National Nanotechnology Coordinated Infrastructure (NNCI).
© 2017 IEEE.