DC and small-signal numerical simulation of graphene base transistor for terahertz operation

Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The working principles of the hot-electron graphene base transistor (GBT) for analog terahertz operation have been investigated by means of a self-consistent Schrodinger-Polsson solver code. Its regions of operation are defined and discussed. With the help of a small-signal model, it is shown that the cutoff frequency does not depend on the quantum capacitance of the graphene layer, which on the contrary severely affects the intrinsic voltage gain, and that terahertz operation is possible.

Original languageEnglish (US)
Title of host publicationESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages314-317
Number of pages4
ISBN (Print)9781479906499
DOIs
StatePublished - Jan 1 2013
Event43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania
Duration: Sep 16 2013Sep 20 2013

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference43rd European Solid-State Device Research Conference, ESSDERC 2013
CountryRomania
CityBucharest
Period9/16/139/20/13

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