TY - GEN
T1 - DC and small-signal numerical simulation of graphene base transistor for terahertz operation
AU - Di Lecce, Valerio
AU - Grassi, Roberto
AU - Gnudi, Antonio
AU - Gnani, Elena
AU - Reggiani, Susanna
AU - Baccarani, Giorgio
PY - 2013/1/1
Y1 - 2013/1/1
N2 - The working principles of the hot-electron graphene base transistor (GBT) for analog terahertz operation have been investigated by means of a self-consistent Schrodinger-Polsson solver code. Its regions of operation are defined and discussed. With the help of a small-signal model, it is shown that the cutoff frequency does not depend on the quantum capacitance of the graphene layer, which on the contrary severely affects the intrinsic voltage gain, and that terahertz operation is possible.
AB - The working principles of the hot-electron graphene base transistor (GBT) for analog terahertz operation have been investigated by means of a self-consistent Schrodinger-Polsson solver code. Its regions of operation are defined and discussed. With the help of a small-signal model, it is shown that the cutoff frequency does not depend on the quantum capacitance of the graphene layer, which on the contrary severely affects the intrinsic voltage gain, and that terahertz operation is possible.
UR - http://www.scopus.com/inward/record.url?scp=84889636207&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84889636207&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2013.6818881
DO - 10.1109/ESSDERC.2013.6818881
M3 - Conference contribution
AN - SCOPUS:84889636207
SN - 9781479906499
T3 - European Solid-State Device Research Conference
SP - 314
EP - 317
BT - ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
PB - IEEE Computer Society
T2 - 43rd European Solid-State Device Research Conference, ESSDERC 2013
Y2 - 16 September 2013 through 20 September 2013
ER -