Abstract
The relationship between attenuation and biasing for CPW architectures on bulk and porous silicon films is investigated. Biasing effects on low resistivity silicon can have loss variations as high as 34 dB/cm under negative bias (0 to -10 V) and 2 dB/cm for positive bias (0 to 10 V) conditions. While the inclusion of an oxide film substantially reduces loss variation (< 0.1 dB/cm), the use of a 68% porous silicon film can provide further stability (< 0.01 dB/cm) in addition to lowered attenuation in the range of 1.3 to 3 dB/cm from 5 to 20 GHz.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 663-666 |
| Number of pages | 4 |
| Journal | IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) |
| Volume | 2 |
| State | Published - Sep 1 2003 |
| Event | 2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States Duration: Jun 22 2003 → Jun 27 2003 |
Keywords
- Bias dependent attenuation
- CPW attenuation
- Porous silicon