Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

G. E. Rowlands, T. Rahman, J. A. Katine, J. Langer, A. Lyle, H. Zhao, J. G. Alzate, A. A. Kovalev, Y. Tserkovnyak, Z. M. Zeng, H. W. Jiang, K. Galatsis, Y. M. Huai, P. Khalili Amiri, K. L. Wang, I. N. Krivorotov, J. P. Wang

Research output: Contribution to journalArticlepeer-review

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Abstract

We show that adding a perpendicular polarizer to a conventional spin torque memory element with an in-plane free layer and an in-plane polarizer can significantly increase the write speed and decrease the write energy of the element. We demonstrate the operation of such spin torque memory elements with write energies of 0.4 pJ and write times of 0.12 ns.

Original languageEnglish (US)
Article number102509
JournalApplied Physics Letters
Volume98
Issue number10
DOIs
StatePublished - Mar 7 2011

Bibliographical note

Funding Information:
This work was supported by DARPA Grant No. HR0011-09-C-0114, by NSF Grant Nos. DMR-0748810 and No. ECCS-0701458, and by Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics.

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