Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities

Ayan Paul, Dong Jiao, Sachin S Sapatnekar, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

A switched capacitor step-down converter fabricated in 32nm CMOS achieves a 5X improvement in response time for fast dynamic voltage and frequency scaling (DVFS). We also present a step-up converter based on a bi-directional voltage doubler, which is capable of reducing supply noise up to 45% by opportunistically borrowing current from adjacent idle power domains. Using ultra-high density deep trench capacitors, we are able to achieve an output power density of 2.78W/mm2 at a peak efficiency of 85% from the step-down converter and 0.9W/mm2 at a peak efficiency of 82% from the voltage doubler.

Original languageEnglish (US)
Title of host publicationProceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
Pages49-52
Number of pages4
DOIs
StatePublished - Dec 1 2013
Event2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 - Singapore, Singapore
Duration: Nov 11 2013Nov 13 2013

Publication series

NameProceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013

Other

Other2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
CountrySingapore
CitySingapore
Period11/11/1311/13/13

Keywords

  • DVFS
  • Deep trench capacitor
  • Efficiency
  • Power density
  • Switched capacitor converter

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