Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

V. R.S.K. Chaganti; Abhinav Prakash; Jin Yue; Bharat Jalan; Steven J. Koester

doi:10.1109/LED.2018.2861320

Demonstration of a Depletion-Mode SrSnO₃ n-Channel MESFET

V. R.S.K. Chaganti, Abhinav Prakash, Jin Yue, Bharat Jalan, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The demonstration of SrSnO₃ metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO₃ film on top of an 11-nm-thick undoped SrSnO₃ film grown by hybrid molecular beam epitaxy on a (110) GdScO₃ substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO₃ using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at V_GS = +1 V and V_DS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).

Original language	English (US)
Article number	8423108
Pages (from-to)	1381-1384
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1109/LED.2018.2861320
State	Published - Sep 2018

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Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Doping
Logic gates
MESFET
MESFETs
Molecular beam epitaxial growth
Performance evaluation
Perovskites
Stannate
Substrates

How much support was provided by MRSEC?

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Reporting period for MRSEC

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10.1109/LED.2018.2861320

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title = "Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET",

abstract = "The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at VGS = +1 V and VDS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).",

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author = "Chaganti, {V. R.S.K.} and Abhinav Prakash and Jin Yue and Bharat Jalan and Koester, {Steven J.}",

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AU - Chaganti, V. R.S.K.

AU - Prakash, Abhinav

AU - Yue, Jin

AU - Jalan, Bharat

AU - Koester, Steven J.

PY - 2018/9

Y1 - 2018/9

N2 - The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at VGS = +1 V and VDS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).

AB - The demonstration of SrSnO3 metal-semiconductor field effect transistors (MESFETs) is reported. The device layer structure consists a 28-nm-thick n-type SrSnO3 film on top of an 11-nm-thick undoped SrSnO3 film grown by hybrid molecular beam epitaxy on a (110) GdScO3 substrate. The MESFETs utilize a Pt Schottky gate electrode and diffused Sc Ohmic contacts. A Schottky barrier height of 1.55 eV was extracted for Pt on SrSnO3 using capacitance-voltage measurements. Devices with a gate length of 3 μ m and source-drain spacing of 9 μm had a drive current of 36 mA/mm at VGS = +1 V and VDS = +3.5 V, and a peak extrinsic (intrinsic) transconductance of 17 mS/mm (35 mS/mm).

KW - Doping

KW - Logic gates

KW - MESFET

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KW - Molecular beam epitaxial growth

KW - Performance evaluation

KW - Perovskites

KW - Stannate

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Demonstration of a Depletion-Mode SrSnO₃ n-Channel MESFET

Abstract

Bibliographical note

Keywords

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Reporting period for MRSEC

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MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this

Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

Access

OpenUrl availability

Other files and links

Fingerprint

Projects

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this

Demonstration of a Depletion-Mode SrSnO₃ n-Channel MESFET