Abstract
Density of electron states in the forbidden band of heavily doped semiconductors is analyzed by the effective mass method in order to find the principal term of the logarithm of density of states in the energy region where density of states is low. It is assumed that the fluctuations in impurity concentrations have a form of homogeneous spheres with varying charge and radius.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 249-257 |
| Number of pages | 9 |
| Journal | Sov Phys Semicond |
| Volume | 4 |
| Issue number | 2 |
| State | Published - Jan 1 1970 |
| Externally published | Yes |