Dependence of composition and microstructure of RuOx films on target status and substrate temperature in reactive sputtering deposition

Q. Wang, K. A. Yang, A. Franciosi, D. F. Evans, W. L. Gladfelter

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Ruthenium oxide films were deposited on Al2O3 (0001) and (11̄02) substrates using reactive sputtering under two different target surface conditions. Films grown when the surface of the target was metallic ruthenium (metallic-target) showed a Ru:O ratio of 1:2.0±0.05 as determined by Rutherford backscattering spectrometry. At elevated deposition temperatures, these films aligned with the substrates as RuO2 (100)∥Al2O3 (0001) and RuO2 (101)∥Al2O3 (11̄02). Films deposited when the target surface was fully oxidized (oxidized-target) exhibited a Ru:O ratio of 1:2.5±0.05 and displayed an oriented crystalline structure even at room temperature. The resistivity of the RuO2.5 films was 75 μΩ-cm and was independent of temperature between 5 and 300 K. Possible causes of this behavior are discussed.

Original languageEnglish (US)
Pages (from-to)151-156
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume433
DOIs
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

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