TY - GEN
T1 - Depinning behaviour of domain wall in magnetic nanowire with asymmetric notch
AU - Liao, Jialin
AU - Ma, Bin
AU - Zhang, Zongzhi
AU - Jin, Qingyuan
AU - Huang, Zhaocong
AU - Hu, Xuefeng
AU - Ding, An
AU - Zhang, Wen
AU - Wu, Jing
AU - Xu, Yongbing
PY - 2010
Y1 - 2010
N2 - The magnetic nanowires have attracted great interests recently for their potential applications in novel logic and memory devices [1,2]. The magnetization reversal of the magnetic nanowires is realized by the nucleation and the propagation of domain walls (DWs) along the wires. Both current and magnetic field driven DW motion have been proposed and investigated widely. One of the techniques to manipulate the DW is to introduce artificial defects to the nanowire structure such as different shapes of notches. Asymmetric notches have been reported to act as an asymmetric energy barrier for the DW and the depinning field and critical depin current depend on the direction of DW propagation, which is related to the slope of notch[3-5]. The "Magnetic ratchet effect" [6] has been addressed since the DW depins and moves easier in one direction than the other. Magnetic diodes were also proposed based on the asymmetric notch structure in magnetic nanowires [7]. However, rather than constriction, the previous reports [3-7] were based on the protruding shape of asymmetric notch. In this paper, we present a study on the depinning behaviour of the DW inside magnetic nanowires with a single inward asymmetric notch.
AB - The magnetic nanowires have attracted great interests recently for their potential applications in novel logic and memory devices [1,2]. The magnetization reversal of the magnetic nanowires is realized by the nucleation and the propagation of domain walls (DWs) along the wires. Both current and magnetic field driven DW motion have been proposed and investigated widely. One of the techniques to manipulate the DW is to introduce artificial defects to the nanowire structure such as different shapes of notches. Asymmetric notches have been reported to act as an asymmetric energy barrier for the DW and the depinning field and critical depin current depend on the direction of DW propagation, which is related to the slope of notch[3-5]. The "Magnetic ratchet effect" [6] has been addressed since the DW depins and moves easier in one direction than the other. Magnetic diodes were also proposed based on the asymmetric notch structure in magnetic nanowires [7]. However, rather than constriction, the previous reports [3-7] were based on the protruding shape of asymmetric notch. In this paper, we present a study on the depinning behaviour of the DW inside magnetic nanowires with a single inward asymmetric notch.
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U2 - 10.1109/IVESC.2010.5644171
DO - 10.1109/IVESC.2010.5644171
M3 - Conference contribution
AN - SCOPUS:78650634195
SN - 9781424466429
T3 - Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010
SP - 589
EP - 590
BT - Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010
T2 - 8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010
Y2 - 14 October 2010 through 16 October 2010
ER -