Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

Jin Yue, Abhinav Prakash, Matthew C. Robbins, Steven J. Koester, Bharat Jalan

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The high room-temperature mobility that can be achieved in BaSnO3 has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on the first demonstration of n-type depletion-mode FET using hybrid molecular beam epitaxy grown La-doped BaSnO3 as a channel material. The devices utilize a heterostructure metal-oxide semiconductor FET (MOSFET) design that includes an epitaxial SrTiO3 barrier layer capped with a thin layer of HfO2 used as a gate dielectric. A field-effect mobility of ∼70 cm2 V-1 s-1, a record high transconductance value of >2mS/mm at room temperature, and the on/off ratio exceeding 107 at 77 K were obtained. Using temperature- and frequency-dependent transport measurements, we quantify the impact of the conduction band offset at the BaSnO3/SrTiO3 interface as well as bulk and interface traps on device characteristics.

Original languageEnglish (US)
Pages (from-to)21061-21065
Number of pages5
JournalACS Applied Materials and Interfaces
Volume10
Issue number25
DOIs
StatePublished - Jun 27 2018

Bibliographical note

Funding Information:
This work is primarily supported by the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205, the UMN MRSEC program under Award DMR-1420013, and partially by NSF through DMR-1741801. Parts of this work were carried out at the Minnesota Nano Center and Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. A.P. acknowledges the support from the UMN Doctoral Dissertation Fellowship.

Keywords

  • defects
  • FET
  • high mobility
  • MBE
  • stannates perovskite
  • trap density

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 5

PubMed: MeSH publication types

  • Journal Article

Fingerprint Dive into the research topics of 'Depletion Mode MOSFET Using La-Doped BaSnO<sub>3</sub> as a Channel Material'. Together they form a unique fingerprint.

Cite this