Depletion Mode MOSFET Using La-Doped BaSnO₃ as a Channel Material

Engineering & Materials Science

• Oxide semiconductors 100%
• Field effect transistors 90%
• Metals 54%
• Conduction bands 47%
• Molecular beam epitaxy 43%
• Gate dielectrics 39%
• Perovskite 38%
• Ferroelectric materials 37%
• Heterojunctions 36%
• Temperature 33%
• Transconductance 33%
• MOSFET devices 32%
• Transistors 23%
• Demonstrations 23%

Chemical Compounds

• Field Effect 83%
• Metal Oxide 70%
• Semiconductor 64%
• Interface Trap 35%
• Band Offset 33%
• Transconductance 32%
• Compound Mobility 32%
• Molecular Beam Epitaxy 30%
• Ambient Reaction Temperature 23%
• Conduction Band 22%
• Dielectric Material 18%