Deposition of hafnium oxide from Hf t -butoxide and nitric oxide

Z. Zhang, B. Xia, W. L. Gladfelter, S. A. Campbell

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The high- κ stack consisting of an optional nitride interfacial layer and a Hf O2 layer was studied. The result shows that nitride or oxynitride interfacial layers can be controllably formed down to a few angstroms. The growth of both interfacial layers is self-limited. The introduction of nitric oxide with hafnium t -butoxide during the high- κ deposition leads to smaller effective oxide thickness (EOT) and gate leakage current. EOTs below 1.0 nm have been achieved with this combination of sources. The beneficial effect of nitric oxide can be explained in terms of reduced interfacial EOT, reduction of carbon contamination, and possibly a small trace amount of nitrogen incorporation.

Original languageEnglish (US)
Pages (from-to)418-423
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number3
DOIs
StatePublished - May 22 2006

Fingerprint Dive into the research topics of 'Deposition of hafnium oxide from Hf t -butoxide and nitric oxide'. Together they form a unique fingerprint.

Cite this