Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope

D. K. Avasthi; S. K. Hui; E. T. Subramaniyam; B. R. Mehta

doi:10.1016/0042-207X(96)00154-6

Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope

D. K. Avasthi, S. K. Hui, E. T. Subramaniyam, B. R. Mehta

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Abstract

A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried out by elastic recoil detection analysis using 100 MeV Ag ions and a ΔE-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8×10^-4 at% with an inaccuracy of 15%.

Original language	English (US)
Pages (from-to)	1061-1064
Number of pages	4
Journal	Vacuum
Volume	47
Issue number	9
DOIs	https://doi.org/10.1016/0042-207X(96)00154-6
State	Published - Sep 1996
Externally published	Yes

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@article{b9aa0e8f8c2b4f81980dcdb46a9fa2ae,

title = "Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope",

abstract = "A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried out by elastic recoil detection analysis using 100 MeV Ag ions and a ΔE-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8×10-4 at% with an inaccuracy of 15%.",

author = "Avasthi, {D. K.} and Hui, {S. K.} and Subramaniyam, {E. T.} and Mehta, {B. R.}",

year = "1996",

month = sep,

doi = "10.1016/0042-207X(96)00154-6",

language = "English (US)",

volume = "47",

pages = "1061--1064",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

number = "9",

}

TY - JOUR

T1 - Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope

AU - Avasthi, D. K.

AU - Hui, S. K.

AU - Subramaniyam, E. T.

AU - Mehta, B. R.

PY - 1996/9

Y1 - 1996/9

N2 - A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried out by elastic recoil detection analysis using 100 MeV Ag ions and a ΔE-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8×10-4 at% with an inaccuracy of 15%.

AB - A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried out by elastic recoil detection analysis using 100 MeV Ag ions and a ΔE-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8×10-4 at% with an inaccuracy of 15%.

UR - http://www.scopus.com/inward/record.url?scp=0030243826&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030243826&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(96)00154-6

DO - 10.1016/0042-207X(96)00154-6

M3 - Article

AN - SCOPUS:0030243826

SN - 0042-207X

VL - 47

SP - 1061

EP - 1064

JO - Vacuum

JF - Vacuum

IS - 9

ER -

Depth profile analysis of porous Si film by ERDA using a ΔE-E detector telescope

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