Design and performance of a molecular beam epitaxy system for metallic heterostructure deposition illustrated by a study of the controlled epitaxy of Cu(111)/Al2O3(0001)

M. S. Lund, C. Leighton

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Abstract

The design and construction of a molecular beam epitaxy (MBE) system for metallic heterostructure deposition was analyzed. The system was compact, cost effective and incorporated only the essential components for the deposition of magnetic metals. It was also observed that the system had a large source to substrate distance, with axial deposition for compatibility with nanolithographic masks. The results show that the inplane crystallite size could be varied independently of the surface roughness by varying the deposition rate at room temperature.

Original languageEnglish (US)
Pages (from-to)2027-2034
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number5
DOIs
StatePublished - Sep 2004

Bibliographical note

Funding Information:
The authors would like to thank M. Fitzsimmons, S. Park, C. Palmstrøm, and I. Steinke for insightful discussions and assistance with characterization measurements, and J. Sahar and R. Victora with assistance with image analysis. We are particularly indebted to L. Schmidt and R. Caretta for the gift of the UHV pumping stack used in this work. Financial support for the work on buffer layers for magnetic heterostructures was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302. The same MRSEC Award supported acquisition of instruments for the electron and x-ray diffraction measurements used in this work.

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