Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

Pankaj Sharma, Rohit Singh, Vishnu Awasthi, Sushil K. Pandey, Vivek Garg, Shaibal Mukherjee

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W-1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of ∼22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current-voltage measurements.

Original languageEnglish (US)
Pages (from-to)85523-85529
Number of pages7
JournalRSC Advances
Volume5
Issue number104
DOIs
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015 The Royal Society of Chemistry.

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