Detection of combinative infrared absorption bands in thin silicon dioxide films

Sang M. Han; Eray S. Aydil

doi:10.1063/1.118424

Detection of combinative infrared absorption bands in thin silicon dioxide films

Sang M. Han, Eray S. Aydil

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO₂ at 1645, 1852, and 2000cm^-1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH₄/¹⁸O₂ mixtures proved that combinations of SiO₂ phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si-O phonon absorptions in SiO₂ films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.

Original language	English (US)
Pages (from-to)	3269-3271
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	24
DOIs	https://doi.org/10.1063/1.118424
State	Published - Jun 16 1997

Access

10.1063/1.118424

OpenUrl availability

Full text

Cite this

@article{3b1e2a7714924f41971595e9021d6128,

title = "Detection of combinative infrared absorption bands in thin silicon dioxide films",

abstract = "Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO2 at 1645, 1852, and 2000cm-1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH4/18O2 mixtures proved that combinations of SiO2 phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si-O phonon absorptions in SiO2 films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.",

author = "Han, {Sang M.} and Aydil, {Eray S.}",

year = "1997",

month = jun,

day = "16",

doi = "10.1063/1.118424",

language = "English (US)",

volume = "70",

pages = "3269--3271",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Detection of combinative infrared absorption bands in thin silicon dioxide films

AU - Han, Sang M.

AU - Aydil, Eray S.

PY - 1997/6/16

Y1 - 1997/6/16

N2 - Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO2 at 1645, 1852, and 2000cm-1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH4/18O2 mixtures proved that combinations of SiO2 phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si-O phonon absorptions in SiO2 films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.

AB - Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO2 at 1645, 1852, and 2000cm-1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH4/18O2 mixtures proved that combinations of SiO2 phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si-O phonon absorptions in SiO2 films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.

UR - http://www.scopus.com/inward/record.url?scp=0003180960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0003180960&partnerID=8YFLogxK

U2 - 10.1063/1.118424

DO - 10.1063/1.118424

M3 - Article

AN - SCOPUS:0003180960

SN - 0003-6951

VL - 70

SP - 3269

EP - 3271

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Detection of combinative infrared absorption bands in thin silicon dioxide films

Abstract

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this