TY - JOUR
T1 - Detection of narrow linewidth acceptor peaks with p-type conduction in phosphorous implanted ZnMgO thin films
AU - Saha, Shantanu
AU - Pandey, Sushil Kumar
AU - Nagar, Saurabh
AU - Chakrabarti, Subhananda
PY - 2015/10
Y1 - 2015/10
N2 - RF sputtered p-type ZnMgO films were successfully prepared by doping phosphorus ions using plasma immersion ion implantation technique for different implantation duration 10-70 sec and subsequent rapid thermal annealing at temperature range 700-1000 °C. Low-temperature (15 K) photoluminescence spectra revealed a highly dominating acceptor-bound exciton peak at 3.36 eV with minimum FWHM of 0.006 eV using Gaussian fitting for the sample implanted for 70 sec and annealed at 900 °C. Donor-bound-acceptor (DAP), free-electron-acceptor (FA), inelastic exciton-exciton scattering (XX) and free exciton (FX) peaks also appeared at 3.24, 3.28, 3.37 and 3.66 eV respectively. Room temperature Hall measurement system showed p-type conductivity for the implanted samples annealed at 800 and 900 °C. The highest hole concentration of 4.19×1016 cm-3 was achieved with mobility value of 5.4 cm2V-1S-1. The PZn-2VZn complex which was a shallow acceptor in ZnMgO, responsible for p-type conduction in ZnMgO films. X-ray diffraction spectra confirmed the presence of the 002 peak for all the samples. Scanning electron microscopy measurement demonstrated the formation of homogenous surface with large size of dense grains of implanted ZnMgO film after annealing at 900 °C. The achievement of p-type Zn0.85Mg0.15O paves the way for the application of ZnMgO in the design of ultraviolet superlattice or quantum-well lightemitting diodes and other optoelectronic devices.
AB - RF sputtered p-type ZnMgO films were successfully prepared by doping phosphorus ions using plasma immersion ion implantation technique for different implantation duration 10-70 sec and subsequent rapid thermal annealing at temperature range 700-1000 °C. Low-temperature (15 K) photoluminescence spectra revealed a highly dominating acceptor-bound exciton peak at 3.36 eV with minimum FWHM of 0.006 eV using Gaussian fitting for the sample implanted for 70 sec and annealed at 900 °C. Donor-bound-acceptor (DAP), free-electron-acceptor (FA), inelastic exciton-exciton scattering (XX) and free exciton (FX) peaks also appeared at 3.24, 3.28, 3.37 and 3.66 eV respectively. Room temperature Hall measurement system showed p-type conductivity for the implanted samples annealed at 800 and 900 °C. The highest hole concentration of 4.19×1016 cm-3 was achieved with mobility value of 5.4 cm2V-1S-1. The PZn-2VZn complex which was a shallow acceptor in ZnMgO, responsible for p-type conduction in ZnMgO films. X-ray diffraction spectra confirmed the presence of the 002 peak for all the samples. Scanning electron microscopy measurement demonstrated the formation of homogenous surface with large size of dense grains of implanted ZnMgO film after annealing at 900 °C. The achievement of p-type Zn0.85Mg0.15O paves the way for the application of ZnMgO in the design of ultraviolet superlattice or quantum-well lightemitting diodes and other optoelectronic devices.
KW - Acceptor-Bound-Exciton Peak
KW - Hall Measurements
KW - Photoluminescence
KW - SEM
KW - XRD
KW - ZnMgO
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U2 - 10.1166/nnl.2015.2044
DO - 10.1166/nnl.2015.2044
M3 - Article
AN - SCOPUS:84957007116
SN - 1941-4900
VL - 7
SP - 822
EP - 827
JO - Nanoscience and Nanotechnology Letters
JF - Nanoscience and Nanotechnology Letters
IS - 10
ER -