Determination of effects of deposition and anneal properties for tetranitratotitanium deposited TiO2 dielectrics

Hyeon Seag Kim, S. A. Campbell, D. C. Gilmer, V. Kaushik, J. Conner, L. Prabhu, A. Anderson

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Carbon and hydrogen free tetranitratotitanium was synthesized, which is believed to thermally decomposed primarily as: Ti(NO3)4→TiO2+4NO2+O 2. The by-products of the thermal decomposition of tetranitratotitanium, which include NO2 and O2, may possibly provide a robust ultrathin tunnel interfacial layer. Due to the hydrogen free nature of thermolysis, N2O may form an oxynitride layer which has been shown to produce thermal oxynitrides with higher quality than NH3-based nitride oxides. Unlike titanium tetrakis isopropoxide (TTIP) deposited films, the interface state density more closely follows the "U" shape characteristic of conventional thermal SiO2/Si interfaces. The integrated interface state density is considerably less for the film annealed at higher temperature, which should produce considerably higher inversion layer mobilities. This improvement of the interface, compared to TTIP deposited films, is believed to be due to the elimination of water vapor from the deposition ambient.

Original languageEnglish (US)
Pages (from-to)3278-3281
Number of pages4
JournalJournal of Applied Physics
Issue number6
StatePublished - Mar 15 1999

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