Development of 5.5-GHz band pass filter in all silicon multilayer substrate with air dielectric

Young Seek Cho, Rhonda R Franklin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A compact 5.5-GHz band pass filter (BPF) with 12.7% 3-dB bandwidth is developed in an all silicon multilayer substrate with air dielectric incorporated for WiMax applications. The topology of the BPF is a capacitively coupled fifth-order Chebyshev BPF. Its volume is 9.3 × 8.5 × 0.6 mm3. Two design aspects - air dielectric and through silicon via (TSV) technology integration - play an essential role in the BPF implementation. The spiral inductor with an integrated air dielectric has quality factor and self-resonant frequency improvement of 112 and 41%, respectively. The TSVs in the BPF design enables the implementation of two-layer inductors with a low value of inductance. The volume of TSV in the two-layer inductor is 75 × 75 × 200 μm3 and its inductance is 0.15 nH at 5 GHz.

Original languageEnglish (US)
Pages (from-to)2340-2345
Number of pages6
JournalMicrowave and Optical Technology Letters
Volume55
Issue number10
DOIs
StatePublished - Oct 1 2013

Keywords

  • air cavity
  • band pass filter
  • inductor
  • quality factor
  • silicon micromachining

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