Developments of SOI monolithic pixel detectors

Y. Arai, T. Miyoshi, Y. Unno, T. Tsuboyama, S. Terada, Y. Ikegami, T. Kohriki, K. Tauchi, Y. Ikemoto, R. Ichimiya, H. Ikeda, K. Hara, H. Miyake, M. Kochiyama, T. Sega, K. Hanagaki, M. Hirose, T. Hatsui, T. Kudo, T. HironoM. Yabashi, Y. Furukawa, G. Varner, M. Cooney, H. Hoedlmoser, J. Kennedy, H. Sahoo, M. Battaglia, P. Denes, C. Vu, D. Contarato, P. Giubilato, L. Glesener, R. Yarema, R. Lipton, G. Deptuch, M. Trimpl, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, M. Okihara, H. Hayashi, Y. Kawai, A. Ohtomo

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


A monolithic pixel detector with 0.2μm silicon-on-insulator (SOI) CMOS technology has been developed. It has both a thick high-resistivity sensor layer and thin LSI circuit layer on a single chip. Integration-type and counting-type pixel detectors are fabricated and tested with light and X-rays. The process is open to many researchers through Multi Project Wafer (MPW) runs operated by KEK. Further improvements of the fabrication technologies are also under investigation by using a buried p-well and 3D integration technologies.

Original languageEnglish (US)
Pages (from-to)186-188
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1
StatePublished - Nov 1 2010


  • Particle tracking
  • Pixel
  • SOI
  • X-ray imaging

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