Device Model for Graphene Spin Valves

Feilong Liu; Yue Liu; Darryl L. Smith; P. Paul Ruden

doi:10.1109/TED.2015.2464793

Device Model for Graphene Spin Valves

Feilong Liu, Yue Liu, Darryl L. Smith, P. Paul Ruden

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.

Original language	English (US)
Article number	7208882
Pages (from-to)	3426-3432
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	10
DOIs	https://doi.org/10.1109/TED.2015.2464793
State	Published - Oct 1 2015

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Magnetoresistance (MR)
Semiconductor device modeling
Spin valves

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title = "Device Model for Graphene Spin Valves",

abstract = "A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.",

keywords = "Magnetoresistance (MR), Semiconductor device modeling, Spin valves",

author = "Feilong Liu and Yue Liu and Smith, {Darryl L.} and Ruden, {P. Paul}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

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doi = "10.1109/TED.2015.2464793",

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AU - Liu, Feilong

AU - Liu, Yue

AU - Smith, Darryl L.

AU - Ruden, P. Paul

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Y1 - 2015/10/1

N2 - A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.

AB - A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.

KW - Magnetoresistance (MR)

KW - Semiconductor device modeling

KW - Spin valves

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ER -

Device Model for Graphene Spin Valves

Abstract

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Keywords

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