Device Model for Graphene Spin Valves

Feilong Liu, Yue Liu, Darryl L. Smith, P. Paul Ruden

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.

Original languageEnglish (US)
Article number7208882
Pages (from-to)3426-3432
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number10
DOIs
StatePublished - Oct 1 2015

Keywords

  • Magnetoresistance (MR)
  • Semiconductor device modeling
  • Spin valves

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