A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.
Bibliographical notePublisher Copyright:
© 2015 IEEE.
- Magnetoresistance (MR)
- Semiconductor device modeling
- Spin valves