Abstract
A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.
Original language | English (US) |
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Article number | 7208882 |
Pages (from-to) | 3426-3432 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 62 |
Issue number | 10 |
DOIs | |
State | Published - Oct 1 2015 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- Magnetoresistance (MR)
- Semiconductor device modeling
- Spin valves