TY - JOUR
T1 - Device Model for Graphene Spin Valves
AU - Liu, Feilong
AU - Liu, Yue
AU - Smith, Darryl L.
AU - Ruden, P. Paul
PY - 2015/10/1
Y1 - 2015/10/1
N2 - A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.
AB - A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.
KW - Magnetoresistance (MR)
KW - Semiconductor device modeling
KW - Spin valves
UR - http://www.scopus.com/inward/record.url?scp=84958109433&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84958109433&partnerID=8YFLogxK
U2 - 10.1109/TED.2015.2464793
DO - 10.1109/TED.2015.2464793
M3 - Article
AN - SCOPUS:84958109433
VL - 62
SP - 3426
EP - 3432
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 10
M1 - 7208882
ER -