Diffusion of hydrogen on the si(001) surface investigated by stm atom tracking

E. Hill, B. Freelon, E. Ganz

Research output: Contribution to journalArticlepeer-review

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Abstract

The scanning tunneling microscopy atom-tracking technique is used to follow the individual diffusive hops of single H and D atoms on the Si(001) surface in ultrahigh vacuum. Attempt frequencies and activation energies for diffusion along the dimer row (intrarow) and between the atoms of a single Si dimer (intradimer) are extracted. For intrarow H diffusion, an activation energy of 1.75±0.10 eV and an attempt frequency of (Formula presented) are found. For intradimer H diffusion, an activation energy of 1.01±0.05 eV and a low attempt frequency of (Formula presented) are found. The ratios of H to D attempt frequencies for intradimer and intrarow diffusion are also determined.

Original languageEnglish (US)
Pages (from-to)15896-15900
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number23
DOIs
StatePublished - 1999

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