Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz-Keldysh oscillations

H. Shen; M. Dutta; W. Chang; R. Moerkirk; D. M. Kim; K. W. Chung; P. P. Ruden; M. I. Nathan; M. A. Stroscio

doi:10.1063/1.106985

Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz-Keldysh oscillations

H. Shen, M. Dutta, W. Chang, R. Moerkirk, D. M. Kim, K. W. Chung, P. P. Ruden, M. I. Nathan, M. A. Stroscio

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We report the first photoreflectance measurement of strain-induced piezoelectric field in a (111)B InGaAs/GaAs structure. The InGaAs quantum well was pseudomorphically grown in the undoped regions of a GaAs undoped-heavily doped structure. Four structures, two each with the same layer structures but different orientation, (111)B and (100), were used in this study. The electric fields in the undoped GaAs region were measured by Franz-Keldysh oscillations in photoreflectance. All the samples have a surface barrier height of about 0.7 eV. However, the measured electric field is 30% stronger in the (111)B sample compared to the (100) sample. We attribute this difference to the strain-induced electric field in the (111)B sample. The piezoelectric field in (111)B strained In_0.15Ga_0.85As obtained in this measurement is 2.2±0.5×10⁵ V/cm, which agrees very well with theory.

Original language	English (US)
Pages (from-to)	2400-2402
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	19
DOIs	https://doi.org/10.1063/1.106985
State	Published - 1992
Externally published	Yes

Access

10.1063/1.106985

OpenUrl availability

Full text

Cite this

@article{1b6af8f85ca742fc9aacc9e370d9da11,

title = "Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz-Keldysh oscillations",

abstract = "We report the first photoreflectance measurement of strain-induced piezoelectric field in a (111)B InGaAs/GaAs structure. The InGaAs quantum well was pseudomorphically grown in the undoped regions of a GaAs undoped-heavily doped structure. Four structures, two each with the same layer structures but different orientation, (111)B and (100), were used in this study. The electric fields in the undoped GaAs region were measured by Franz-Keldysh oscillations in photoreflectance. All the samples have a surface barrier height of about 0.7 eV. However, the measured electric field is 30% stronger in the (111)B sample compared to the (100) sample. We attribute this difference to the strain-induced electric field in the (111)B sample. The piezoelectric field in (111)B strained In0.15Ga0.85As obtained in this measurement is 2.2±0.5×105 V/cm, which agrees very well with theory.",

author = "H. Shen and M. Dutta and W. Chang and R. Moerkirk and Kim, {D. M.} and Chung, {K. W.} and Ruden, {P. P.} and Nathan, {M. I.} and Stroscio, {M. A.}",

year = "1992",

doi = "10.1063/1.106985",

language = "English (US)",

volume = "60",

pages = "2400--2402",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz-Keldysh oscillations

AU - Shen, H.

AU - Dutta, M.

AU - Chang, W.

AU - Moerkirk, R.

AU - Kim, D. M.

AU - Chung, K. W.

AU - Ruden, P. P.

AU - Nathan, M. I.

AU - Stroscio, M. A.

PY - 1992

Y1 - 1992

N2 - We report the first photoreflectance measurement of strain-induced piezoelectric field in a (111)B InGaAs/GaAs structure. The InGaAs quantum well was pseudomorphically grown in the undoped regions of a GaAs undoped-heavily doped structure. Four structures, two each with the same layer structures but different orientation, (111)B and (100), were used in this study. The electric fields in the undoped GaAs region were measured by Franz-Keldysh oscillations in photoreflectance. All the samples have a surface barrier height of about 0.7 eV. However, the measured electric field is 30% stronger in the (111)B sample compared to the (100) sample. We attribute this difference to the strain-induced electric field in the (111)B sample. The piezoelectric field in (111)B strained In0.15Ga0.85As obtained in this measurement is 2.2±0.5×105 V/cm, which agrees very well with theory.

AB - We report the first photoreflectance measurement of strain-induced piezoelectric field in a (111)B InGaAs/GaAs structure. The InGaAs quantum well was pseudomorphically grown in the undoped regions of a GaAs undoped-heavily doped structure. Four structures, two each with the same layer structures but different orientation, (111)B and (100), were used in this study. The electric fields in the undoped GaAs region were measured by Franz-Keldysh oscillations in photoreflectance. All the samples have a surface barrier height of about 0.7 eV. However, the measured electric field is 30% stronger in the (111)B sample compared to the (100) sample. We attribute this difference to the strain-induced electric field in the (111)B sample. The piezoelectric field in (111)B strained In0.15Ga0.85As obtained in this measurement is 2.2±0.5×105 V/cm, which agrees very well with theory.

UR - http://www.scopus.com/inward/record.url?scp=0002553219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0002553219&partnerID=8YFLogxK

U2 - 10.1063/1.106985

DO - 10.1063/1.106985

M3 - Article

AN - SCOPUS:0002553219

SN - 0003-6951

VL - 60

SP - 2400

EP - 2402

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz-Keldysh oscillations

Abstract

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this